3.6A (Ta),Current - Continuous Drain (Id) @ 25°C
-,Input Capacitance (Ciss) @ Vds
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTHS5443T1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 65 mOhm @ 3.6A, 4.5V 600mV @ 250µA 12nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
NTHS5443T1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 65 mOhm @ 3.6A, 4.5V 600mV @ 250µA 12nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI8405DB-T1-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 3.6A (Ta) 55 mOhm @ 1A, 4.5V 950mV @ 250µA 21nC @ 4.5V - 1.47W Surface Mount 4-XFBGA, CSPBGA
SI7415DN-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 3.6A (Ta) 65 mOhm @ 5.7A, 10V 3V @ 250µA 25nC @ 10V - 1.5W Surface Mount PowerPAK® 1212-8
SI3443BDV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 60 mOhm @ 4.7A, 4.5V 1.4V @ 250µA 9nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI8401DB-T1-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 65 mOhm @ 1A, 4.5V 1.4V @ 250µA 17nC @ 4.5V - 1.47W Surface Mount 4-XFBGA, CSPBGA
SI5443DC-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 65 mOhm @ 3.6A, 4.5V 600mV @ 250µA 14nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI5443DC-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 65 mOhm @ 3.6A, 4.5V 600mV @ 250µA 14nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI8405DB-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 3.6A (Ta) 55 mOhm @ 1A, 4.5V 950mV @ 250µA 21nC @ 4.5V - 1.47W Surface Mount 4-XFBGA, CSPBGA
SQ7415EN-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 3.6A (Ta) 65 mOhm @ 5.7A, 10V 3V @ 250µA 25nC @ 10V - 1.5W Surface Mount PowerPAK® 1212-8