| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDPB58UPE,115 | NXP SEMICONDUCTORS | 2 P-Channel (Dual) | 20V | 3.6A (Ta) | 67 mOhm @ 2A, 4.5V | 950mV @ 250µA | 9.5nC @ 4.5V | 804pF @ 10V | 515mW | Surface Mount | 6-UDFN Exposed Pad | |
| SI8405DB-T1-E1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 12V | 3.6A (Ta) | 55 mOhm @ 1A, 4.5V | 950mV @ 250µA | 21nC @ 4.5V | - | 1.47W | Surface Mount | 4-XFBGA, CSPBGA | |
| SI8405DB-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 12V | 3.6A (Ta) | 55 mOhm @ 1A, 4.5V | 950mV @ 250µA | 21nC @ 4.5V | - | 1.47W | Surface Mount | 4-XFBGA, CSPBGA |
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