3.6A (Ta),Current - Continuous Drain (Id) @ 25°C
65 mOhm @ 1A, 4.5V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI8401DB-T1-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 65 mOhm @ 1A, 4.5V 1.4V @ 250µA 17nC @ 4.5V - 1.47W Surface Mount 4-XFBGA, CSPBGA
SI8401DB-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 65 mOhm @ 1A, 4.5V 1.4V @ 250µA 17nC @ 4.5V - 1.47W Surface Mount 4-XFBGA, CSPBGA