3.6A (Ta),Current - Continuous Drain (Id) @ 25°C
60 mOhm @ 4.7A, 4.5V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI3443BDV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 60 mOhm @ 4.7A, 4.5V 1.4V @ 250µA 9nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3443BDV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.6A (Ta) 60 mOhm @ 4.7A, 4.5V 1.4V @ 250µA 9nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)