| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8489EDB-T2-E1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 3.6A (Ta) | 44 mOhm @ 1.5A, 10V | 1.2V @ 250µA | 27nC @ 10V | 765pF @ 10V | 780mW | Surface Mount | 4-UFBGA |
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