3.5A (Tc),Current - Continuous Drain (Id) @ 25°C
40W,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDD5N50FTM_WS FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 500V 3.5A (Tc) 1.55 Ohm @ 1.75A, 10V 5V @ 250µA 15nC @ 10V 650pF @ 25V 40W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5N50FTF_WS FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 500V 3.5A (Tc) 1.55 Ohm @ 1.75A, 10V 5V @ 250µA 15nC @ 10V 650pF @ 25V 40W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFIBC40GPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab
IRF9620PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 40W Through Hole TO-220-3
IRFIBC40GLCPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab
IRF9620 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 40W Through Hole TO-220-3
IRFIBC40G VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab
IRFIBC40GLC VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab