3.5A (Tc),Current - Continuous Drain (Id) @ 25°C
350pF @ 25V,Input Capacitance (Ciss) @ Vds
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF9620PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 40W Through Hole TO-220-3
IRF9620SPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9620STRLPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9620 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 40W Through Hole TO-220-3
IRF9620S VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9620L VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF9620STRL VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9620STRR VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB