3.5A (Tc),Current - Continuous Drain (Id) @ 25°C
39nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXFR4N100Q IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 3.5A (Tc) 3 Ohm @ 2A, 10V 5V @ 1.5mA 39nC @ 10V 1050pF @ 25V 80W Through Hole -
IRFIBC40GLCPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab
IRFIBC40GLC VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab