3.5A (Tc),Current - Continuous Drain (Id) @ 25°C
4V @ 250µA,Vgs(th) (Max) @ Id
24 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
2N6782 MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET N-Channel, Metal Oxide 100V 3.5A (Tc) 600 mOhm @ 2.25A, 10V 4V @ 250µA 8.1nC @ 10V - 800W - -
2N6790 MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 800 mOhm @ 2.25A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW - -
2N6782U MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET N-Channel, Metal Oxide 100V 3.5A (Tc) 600 mOhm @ 2.25A, 10V 4V @ 250µA 8.1nC @ 10V - 800mW - -
JANTX2N6782 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 100V 3.5A (Tc) 610 mOhm @ 3.5A, 10V 4V @ 250µA 8.1nC @ 10V - 15W Through Hole TO-205AF
JANTX2N6782U MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 100V 3.5A (Tc) 610 mOhm @ 3.5A, 10V 4V @ 250µA 8.1nC @ 10V - 800mW Surface Mount 18-BQFN Exposed Pad
JAN2N6782 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 100V 3.5A (Tc) 610 mOhm @ 3.5A, 10V 4V @ 250µA 8.1nC @ 10V - 15W Through Hole TO-205AF
JAN2N6790 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 850 mOhm @ 3.5A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW Through Hole TO-205AF
JANTX2N6790 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 850 mOhm @ 3.5A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW - -
JANTXV2N6790 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 850 mOhm @ 3.5A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW - -
JANTXV2N6782 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 100V 3.5A (Tc) 610 mOhm @ 3.5A, 10V 4V @ 250µA 8.1nC @ 10V - 15W - -