600V,Drain to Source Voltage (Vdss)
3.5A (Tc),Current - Continuous Drain (Id) @ 25°C
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
2SK4197LS ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 3.25 Ohm @ 1.8A, 10V 5V @ 1mA 11nC @ 10V 260pF @ 30V 2W Through Hole TO-220-3 Full Pack
IRFIBC40GPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab
IRFIBC40GLCPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab
IRFIBC40G VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab
IRFIBC40GLC VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 40W Through Hole TO-220-3 Full Pack, Isolated Tab