200V,Drain to Source Voltage (Vdss)
3.5A (Tc),Current - Continuous Drain (Id) @ 25°C
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQPF5N20L FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 1.2 Ohm @ 1.75A, 10V 2V @ 250µA 6.2nC @ 5V 325pF @ 25V 32W Through Hole TO-220-3 Full Pack
FQPF5N20 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 1.2 Ohm @ 1.75A, 10V 5V @ 250µA 7.5nC @ 10V 270pF @ 25V 32W Through Hole TO-220-3 Full Pack
2N6790 MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 800 mOhm @ 2.25A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW - -
JAN2N6790 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 850 mOhm @ 3.5A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW Through Hole TO-205AF
JANTX2N6790 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 850 mOhm @ 3.5A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW - -
JANTXV2N6790 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 200V 3.5A (Tc) 850 mOhm @ 3.5A, 10V 4V @ 250µA 14.3nC @ 10V - 800mW - -
IRF9620PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 40W Through Hole TO-220-3
IRF9620SPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9620STRLPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9620 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 40W Through Hole TO-220-3