| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFR4N100Q | IXYS CORP | MOSFET N-Channel, Metal Oxide | 1000V (1kV) | 3.5A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 80W | Through Hole | - | |
| 2N6782 | MICROSEMI COMMERCIAL BUSINESS UNIT | MOSFET N-Channel, Metal Oxide | 100V | 3.5A (Tc) | 600 mOhm @ 2.25A, 10V | 4V @ 250µA | 8.1nC @ 10V | - | 800W | - | - | |
| 2N6790 | MICROSEMI COMMERCIAL BUSINESS UNIT | MOSFET N-Channel, Metal Oxide | 200V | 3.5A (Tc) | 800 mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3nC @ 10V | - | 800mW | - | - | |
| 2N6782U | MICROSEMI COMMERCIAL BUSINESS UNIT | MOSFET N-Channel, Metal Oxide | 100V | 3.5A (Tc) | 600 mOhm @ 2.25A, 10V | 4V @ 250µA | 8.1nC @ 10V | - | 800mW | - | - | |
| JANTX2N6790 | MICROSEMI CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.5A (Tc) | 850 mOhm @ 3.5A, 10V | 4V @ 250µA | 14.3nC @ 10V | - | 800mW | - | - | |
| JANTXV2N6790 | MICROSEMI CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.5A (Tc) | 850 mOhm @ 3.5A, 10V | 4V @ 250µA | 14.3nC @ 10V | - | 800mW | - | - | |
| JANTXV2N6782 | MICROSEMI CORP | MOSFET N-Channel, Metal Oxide | 100V | 3.5A (Tc) | 610 mOhm @ 3.5A, 10V | 4V @ 250µA | 8.1nC @ 10V | - | 15W | - | - | |
| JAN2N6782U | MICROSEMI CORP | MOSFET N-Channel, Metal Oxide | 100V | 3.5A (Tc) | 610 mOhm @ 3.5A, 10V | 4V @ 250µA | 8.1nC @ 10V | - | 800mW | - | - | |
| JANTXV2N6782U | MICROSEMI CORP | MOSFET N-Channel, Metal Oxide | 100V | 3.5A (Tc) | 610 mOhm @ 3.5A, 10V | 4V @ 250µA | 8.1nC @ 10V | - | 800mW | - | - |
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