3.4A,Current - Continuous Drain (Id) @ 25°C
11nC @ 4.5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI6963BDQ-T1-GE3 VISHAY SILICONIX
2 P-Channel (Dual) 20V 3.4A 45 mOhm @ 3.9A, 4.5V 1.4V @ 250µA 11nC @ 4.5V - 830mW Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6963BDQ-T1-E3 VISHAY SILICONIX
2 P-Channel (Dual) 20V 3.4A 45 mOhm @ 3.9A, 4.5V 1.4V @ 250µA 11nC @ 4.5V - 830mW Surface Mount 8-TSSOP (0.173", 4.40mm Width)