3.2A (Ta), 4.7A (Tc),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI9407BDY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 3.2A (Ta), 4.7A (Tc) 120 mOhm @ 3.2A, 10V 3V @ 250µA 22nC @ 10V 600pF @ 30V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI9407BDY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 3.2A (Ta), 4.7A (Tc) 120 mOhm @ 3.2A, 10V 3V @ 250µA 22nC @ 10V 600pF @ 30V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)