3.2A (Ta), 4.6A (Tc),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4104DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 3.2A (Ta), 4.6A (Tc) 105 mOhm @ 5A, 10V 4.5V @ 250µA 13nC @ 10V 446pF @ 50V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4104DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 3.2A (Ta), 4.6A (Tc) 105 mOhm @ 5A, 10V 4.5V @ 250µA 13nC @ 10V 446pF @ 50V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)