3.1A (Ta),Current - Continuous Drain (Id) @ 25°C
15 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP3105LVT-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 75 mOhm @ 4.2A, 10V 1.5V @ 250µA 19.8nC @ 10V 839pF @ 15V 1.15W Surface Mount SOT-23-6 Thin, TSOT-23-6
ZXMN6A11GTA DIODES INC
MOSFET N-Channel, Metal Oxide 60V 3.1A (Ta) 120 mOhm @ 2.5A, 10V 3V @ 250µA 5.7nC @ 10V 330pF @ 40V 2W Surface Mount TO-261-4, TO-261AA
FDFMA2P029Z FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 3.1A (Ta) 95 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 720pF @ 10V 700mW Surface Mount 6-WDFN Exposed Pad
AO4442 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 75V 3.1A (Ta) 130 mOhm @ 3.1A, 10V 3V @ 250µA 6.5nC @ 10V 350pF @ 37.5V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
ZXMN6A11GTC DIODES INC
MOSFET N-Channel, Metal Oxide 60V 3.1A (Ta) 120 mOhm @ 2.5A, 10V 1V @ 250µA 5.7nC @ 10V 330pF @ 40V 2W Surface Mount TO-261-4, TO-261AA
IRLL024NPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 55V 3.1A (Ta) 65 mOhm @ 3.1A, 10V 2V @ 250µA 15.6nC @ 5V 510pF @ 25V 1W Surface Mount TO-261-4, TO-261AA
IRLL024NTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 55V 3.1A (Ta) 65 mOhm @ 3.1A, 10V 2V @ 250µA 15.6nC @ 5V 510pF @ 25V 1W Surface Mount TO-261-4, TO-261AA
PMV37EN,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 3.1A (Ta) 36 mOhm @ 3.1A, 10V 2.5V @ 250µA 10nC @ 10V 330pF @ 10V 380mW Surface Mount TO-236-3, SC-59, SOT-23-3
PMDPB56XN,115 NXP SEMICONDUCTORS
2 N-Channel (Dual) 30V 3.1A (Ta) 73 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 2.9nC @ 4.5V 170pF @ 15V 510mW Surface Mount 6-UDFN Exposed Pad
SI1406DH-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 3.1A (Ta) 65 mOhm @ 3.9A, 4.5V 1.2V @ 250µA 7.5nC @ 4.5V - 1W Surface Mount 6-TSSOP, SC-88, SOT-363