2A (Tc),Current - Continuous Drain (Id) @ 25°C
3.1W,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF710SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI4829DY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2A (Tc) 215 mOhm @ 2.5A, 4.5V 1.5V @ 250µA 8nC @ 10V 210pF @ 10V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4829DY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2A (Tc) 215 mOhm @ 2.5A, 4.5V 1.5V @ 250µA 8nC @ 10V 210pF @ 10V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF710STRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF710S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF710L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF710STRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF710STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB