2A (Tc),Current - Continuous Drain (Id) @ 25°C
4.4 Ohm @ 1.2A, 10V,Rds On (Max) @ Id, Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFRC20PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFUC20PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IRFRC20TRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFRC20TRRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFRC20 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFRC20TR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFUC20 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IRFRC20TRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFRC20TRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63