2A (Tc),Current - Continuous Drain (Id) @ 25°C
3.6 Ohm @ 1.2A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF710PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 36W Through Hole TO-220-3
IRF710SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF710STRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF710 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 36W Through Hole TO-220-3
IRF710S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF710L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF710STRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF710STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB