| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4829DY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 2A (Tc) | 215 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 8nC @ 10V | 210pF @ 10V | 3.1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4829DY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 2A (Tc) | 215 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 8nC @ 10V | 210pF @ 10V | 3.1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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