| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDB8442_F085 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 40V | 28A (Ta) | 5 mOhm @ 80A, 10V | 4V @ 250µA | 235nC @ 10V | 12200pF @ 25V | 254W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| TPH5R906NH,L1Q | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 28A (Ta) | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | 57W | Surface Mount | 8-PowerVDFN | |
| FDB6021P | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 20V | 28A (Ta) | 30 mOhm @ 14A, 4.5V | 1.5V @ 250µA | 28nC @ 4.5V | 1890pF @ 10V | 37W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| 2SJ652 | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 60V | 28A (Ta) | 38 mOhm @ 14A, 10V | - | 80nC @ 10V | 4360pF @ 20V | 2W | Through Hole | TO-220-3 Full Pack | |
| 2SJ652-RA11 | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 60V | 28A (Ta) | 38 mOhm @ 14A, 10V | - | 80nC @ 10V | 4360pF @ 20V | 2W | Through Hole | TO-220-3 Full Pack | |
| 2SK3483-AZ | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 100V | 28A (Ta) | 52 mOhm @ 14A, 10V | - | 49nC @ 10V | 2300pF @ 10V | 1W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| RMW280N03TB | ROHM CO LTD | MOSFET N-Channel, Metal Oxide | 30V | 28A (Ta) | 2.8 mOhm @ 28A, 10V | 2.5V @ 1mA | 53nC @ 10V | 3130pF @ 15V | 3W | Surface Mount | 8-SMD, Flat Lead | |
| TPCA8062-H,LQ(CM | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 28A (Ta) | 5.6 mOhm @ 14A, 10V | 2.3V @ 300µA | 34nC @ 10V | 2900pF @ 10V | 42W | Surface Mount | 8-PowerVDFN | |
| TPCA8051-H(T2L1,VM | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 80V | 28A (Ta) | 9.4 mOhm @ 14A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7540pF @ 10V | 45W | Surface Mount | 8-PowerVDFN | |
| SIR864DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 28A (Ta) | 3.6 mOhm @ 15A, 10V | 2.4V @ 250µA | 65nC @ 10V | 2460pF @ 15V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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