270mA (Ta),Current - Continuous Drain (Id) @ 25°C
6 Ohm @ 500mA, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BS250KL-TR1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 270mA (Ta) 6 Ohm @ 500mA, 10V 3V @ 250µA 3nC @ 15V - 800mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TP0610KL-TR1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 270mA (Ta) 6 Ohm @ 500mA, 10V 3V @ 250µA 3nC @ 15V - 800mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads