26.1A (Ta), 35A (Tc),Current - Continuous Drain (Id) @ 25°C
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI7100DN-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 26.1A (Ta), 35A (Tc) 3.5 mOhm @ 15A, 4.5V 1V @ 250µA 105nC @ 8V 3810pF @ 4V 52W Surface Mount PowerPAK® 1212-8
SI7100DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 26.1A (Ta), 35A (Tc) 3.5 mOhm @ 15A, 4.5V 1V @ 250µA 105nC @ 8V 3810pF @ 4V 52W Surface Mount PowerPAK® 1212-8
SI7104DN-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 26.1A (Ta), 35A (Tc) 3.7 mOhm @ 26.1A, 4.5V 1.8V @ 250µA 70nC @ 10V 2800pF @ 6V 52W Surface Mount PowerPAK® 1212-8
SI7104DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 26.1A (Ta), 35A (Tc) 3.7 mOhm @ 26.1A, 4.5V 1.8V @ 250µA 70nC @ 10V 2800pF @ 6V 52W Surface Mount PowerPAK® 1212-8