22A (Tc),Current - Continuous Drain (Id) @ 25°C
50nC @ 10V,Gate Charge (Qg) @ Vgs
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQB22P10TM_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 3.75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB22P10TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 3.75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTQ22N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 350W Through Hole TO-3P-3, SC-65-3
IXFH22N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 2.5mA 50nC @ 10V 2630pF @ 25V 350W Through Hole TO-247-3
IXTH22N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 350W Through Hole TO-247-3
FQP22P10 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 125W Through Hole TO-220-3
IXTV22N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 350W Through Hole TO-220-3, Short Tab
IXFV22N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 2.5mA 50nC @ 10V 2630pF @ 25V 350W Through Hole TO-220-3, Short Tab
IXTV22N50PS IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 350W Surface Mount PLUS-220SMD
IXFV22N50PS IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 2.5mA 50nC @ 10V 2630pF @ 25V 350W Surface Mount PLUS-220SMD