| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCT2160KEC | ROHM CO LTD | SiCFET N-Channel, Silicon Carbide | 1200V (1.2kV) | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 165W | Through Hole | TO-247-3 | |
| APT12057LFLLG | MICROSEMI POWER PRODUCTS GROUP | MOSFET N-Channel, Metal Oxide | 1200V (1.2kV) | 22A (Tc) | 570 mOhm @ 11A, 10V | 5V @ 2.5mA | 185nC @ 10V | 5155pF @ 25V | 690W | Through Hole | TO-264-3, TO-264AA | |
| APT12057B2LLG | MICROSEMI POWER PRODUCTS GROUP | MOSFET N-Channel, Metal Oxide | 1200V (1.2kV) | 22A (Tc) | 570 mOhm @ 11A, 10V | 5V @ 2.5mA | 290nC @ 10V | 6200pF @ 25V | 690W | - | - |
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