| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDMC0310AS_F127 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 30V | 21A (Tc) | 4.4 mOhm @ 19A, 10V | 3V @ 1mA | 52nC @ 10V | 3165pF @ 15V | 2.4W | Surface Mount | 8-WDFN Exposed Pad | |
| IPP60R165CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 192W | Through Hole | TO-220-3 | |
| IPA60R165CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 660µA | 52nC @ 10V | 2000pF @ 100V | 34W | Through Hole | TO-220-3 Full Pack | |
| IPW60R165CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 192W | Through Hole | TO-247-3 | |
| IPI60R165CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 192W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA |
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