600V,Drain to Source Voltage (Vdss)
21A (Tc),Current - Continuous Drain (Id) @ 25°C
32 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STB25NM60ND STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 160 mOhm @ 10.5A, 10V 5V @ 250µA 80nC @ 10V 2400pF @ 50V 160W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP25NM60ND STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 160 mOhm @ 10.5A, 10V 5V @ 250µA 80nC @ 10V 2400pF @ 50V 160W Through Hole TO-220-3
STW25NM60ND STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 160 mOhm @ 10.5A, 10V 5V @ 250µA 80nC @ 10V 2400pF @ 50V 160W Through Hole TO-247-3
STW26NM60ND STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 175 mOhm @ 10.5A, 10V 5V @ 250µA 54.6nC @ 10V 1817pF @ 100V 190W Through Hole TO-247-3
STP26NM60ND STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 175 mOhm @ 10.5A, 10V 5V @ 250µA 54.6nC @ 10V 1817pF @ 100V 190W Through Hole TO-220-3
IPP60R165CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 165 mOhm @ 12A, 10V 3.5V @ 790µA 52nC @ 10V 2000pF @ 100V 192W Through Hole TO-220-3
IPA60R165CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 165 mOhm @ 12A, 10V 3.5V @ 660µA 52nC @ 10V 2000pF @ 100V 34W Through Hole TO-220-3 Full Pack
IPW60R165CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 165 mOhm @ 12A, 10V 3.5V @ 790µA 52nC @ 10V 2000pF @ 100V 192W Through Hole TO-247-3
APT6029BFLLG MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 290 mOhm @ 10.5A, 10V 5V @ 1mA 65nC @ 10V 2615pF @ 25V 300W Through Hole TO-247-3
APT6029BLLG MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 600V 21A (Tc) 290 mOhm @ 10.5A, 10V 5V @ 1mA 65nC @ 10V 2615pF @ 25V 300W Through Hole TO-247-3