20A (Ta),Current - Continuous Drain (Id) @ 25°C
27nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDD6782A FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 25V 20A (Ta) 10.5 mOhm @ 14.9A, 10V 3V @ 250µA 27nC @ 10V 1065pF @ 13V 3.7W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
RJK1054DPB-00#J5 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 100V 20A (Ta) 22 mOhm @ 10A, 10V - 27nC @ 10V 2000pF @ 10V 55W Surface Mount SC-100, SOT-669
HAT2183WP RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 150V 20A (Ta) 64 mOhm @ 10A, 10V - 27nC @ 10V 1200pF @ 25V 30W Surface Mount 8-WDFN Exposed Pad
TK20J60U(F) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 20A (Ta) 190 mOhm @ 10A, 10V 5V @ 1mA 27nC @ 10V 1470pF @ 10V 190W Through Hole TO-3P-3, SC-65-3
TK20X60U(TE24L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 20A (Ta) 190 mOhm @ 10A, 10V 5V @ 1mA 27nC @ 10V 1470pF @ 10V 150W Surface Mount SC-97
TK20A60U(STA4,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 20A (Ta) 190 mOhm @ 10A, 10V 5V @ 1mA 27nC @ 10V 1470pF @ 10V 45W Through Hole TO-220-3 Full Pack
TK20E60U,S1X(S TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 20A (Ta) 190 mOhm @ 10A, 10V 5V @ 1mA 27nC @ 10V 1470pF @ 10V 190W Through Hole TO-220-3
TK20A60U(Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 20A (Ta) 190 mOhm @ 10A, 10V 5V @ 1mA 27nC @ 10V 1470pF @ 10V 45W Through Hole TO-220-3 Full Pack