200A (Tc),Current - Continuous Drain (Id) @ 25°C
30 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTK200N10L2 IXYS CORP
MOSFET N-Channel, Metal Oxide 100V 200A (Tc) 11 mOhm @ 100A, 10V 4.5V @ 3mA 540nC @ 10V 23000pF @ 25V 1040W Through Hole TO-264-3, TO-264AA
IXTP200N055T2 IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 200A (Tc) 4.2 mOhm @ 50A, 10V 4V @ 250µA 109nC @ 10V 6800pF @ 25V 360W Through Hole TO-220-3
IXFX200N10P IXYS CORP
MOSFET N-Channel, Metal Oxide 100V 200A (Tc) 7.5 mOhm @ 100A, 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V 830W Through Hole TO-247-3
IXTK200N10P IXYS CORP
MOSFET N-Channel, Metal Oxide 100V 200A (Tc) 7.5 mOhm @ 100A, 10V 5V @ 500µA 240nC @ 10V 7600pF @ 25V 800W Through Hole TO-264-3, TO-264AA
IXTX200N10L2 IXYS CORP
MOSFET N-Channel, Metal Oxide 100V 200A (Tc) 11 mOhm @ 100A, 10V 4.5V @ 3mA 540nC @ 10V 23000pF @ 25V 1040W Through Hole TO-247-3
IXTQ200N10T IXYS CORP
MOSFET N-Channel, Metal Oxide 100V 200A (Tc) 5.5 mOhm @ 50A, 10V 4.5V @ 250µA 152nC @ 10V 9400pF @ 25V 550W Through Hole TO-3P-3, SC-65-3
IXTV200N10T IXYS CORP
MOSFET N-Channel, Metal Oxide 100V 200A (Tc) 5.5 mOhm @ 50A, 10V 4.5V @ 250µA 152nC @ 10V 9400pF @ 25V 550W Through Hole TO-220-3, Short Tab
IXTQ200N06P IXYS CORP
MOSFET N-Channel, Metal Oxide 60V 200A (Tc) 5 mOhm @ 400A, 15V 5V @ 250µA 200nC @ 10V 5400pF @ 25V 714W Through Hole TO-3P-3, SC-65-3
IXTA200N075T IXYS CORP
MOSFET N-Channel, Metal Oxide 75V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 160nC @ 10V 6800pF @ 25V 430W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA200N075T7 IXYS CORP
MOSFET N-Channel, Metal Oxide 75V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 160nC @ 10V 6800pF @ 25V 430W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB