| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB60R190C6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 151W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPW60R190C6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 151W | Through Hole | TO-247-3 | |
| IPW60R190E6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 151W | Through Hole | TO-247-3 | |
| IPP60R190E6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 151W | Through Hole | TO-220-3 | |
| IPB65R190C6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 151W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPI60R190C6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 151W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPW65R190C6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 151W | Through Hole | TO-247-3 | |
| IPW65R190E6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 151W | Through Hole | TO-247-3 | |
| IPP65R190C6XKSA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 151W | Through Hole | TO-220-3 | |
| IPP65R190E6XKSA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 151W | Through Hole | TO-220-3 |
© 2016 Copyright
