20.2A (Tc),Current - Continuous Drain (Id) @ 25°C
1620pF @ 100V,Input Capacitance (Ciss) @ Vds
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPB65R190C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 151W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPW65R190C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 151W Through Hole TO-247-3
IPW65R190E6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 151W Through Hole TO-247-3
IPP65R190C6XKSA1 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 151W Through Hole TO-220-3
IPP65R190E6XKSA1 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 151W Through Hole TO-220-3
IPA65R190E6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 34W Through Hole TO-220-3 Full Pack
IPI65R190C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 151W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPA65R190C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 34W Through Hole TO-220-3 Full Pack