| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQPF5P10 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 100V | 2.9A (Tc) | 1.05 Ohm @ 1.45A, 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | 23W | Through Hole | TO-220-3 Full Pack | |
| PMDPB85UPE,115 | NXP SEMICONDUCTORS | 2 P-Channel (Dual) | 20V | 2.9A (Tc) | 103 mOhm @ 1.3A, 4.5V | 950mV @ 250µA | 8.1nC @ 4.5V | 514pF @ 10V | 515mW | Surface Mount | 6-UDFN Exposed Pad | |
| SI3459BDV-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 2.9A (Tc) | 216 mOhm @ 2.2A, 10V | 3V @ 250µA | 12nC @ 10V | 350pF @ 30V | 3.3W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) |
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