| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDFMJ2P023Z | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 20V | 2.9A (Ta) | 112 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 400pF @ 10V | 700mW | Surface Mount | 6-WDFN Exposed Pad | |
| SSM3K303T(TE85L,F) | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 2.9A (Ta) | 83 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2316DS-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 2.9A (Ta) | 50 mOhm @ 3.4A, 10V | 800mV @ 250µA | 7nC @ 10V | 215pF @ 15V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2316DS-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 2.9A (Ta) | 50 mOhm @ 3.4A, 10V | 800mV @ 250µA | 7nC @ 10V | 215pF @ 15V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
© 2016 Copyright
