Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
BSP613P | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 1.8W | Surface Mount | TO-261-4, TO-261AA | |
BSP613P L6327 | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 1.8W | Surface Mount | TO-261-4, TO-261AA | |
PSMN165-200K,518 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 200V | 2.9A (Ta) | 165 mOhm @ 2.5A, 10V | 4V @ 1mA | 40nC @ 10V | 1330pF @ 25V | 3.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |