2.9A (Ta),Current - Continuous Drain (Id) @ 25°C
57 mOhm @ 3.3A, 4.5V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2321DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 57 mOhm @ 3.3A, 4.5V 900mV @ 250µA 13nC @ 4.5V 715pF @ 6V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2321DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 57 mOhm @ 3.3A, 4.5V 900mV @ 250µA 13nC @ 4.5V 715pF @ 6V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3