2.9A (Ta),Current - Continuous Drain (Id) @ 25°C
50 mOhm @ 3.4A, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2316DS-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.9A (Ta) 50 mOhm @ 3.4A, 10V 800mV @ 250µA 7nC @ 10V 215pF @ 15V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2316DS-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.9A (Ta) 50 mOhm @ 3.4A, 10V 800mV @ 250µA 7nC @ 10V 215pF @ 15V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3