| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMN3B14FTA | DIODES INC | MOSFET N-Channel, Metal Oxide | 30V | 2.9A (Ta) | 80 mOhm @ 3.1A, 4.5V | 700mV @ 250µA | 6.7nC @ 4.5V | 568pF @ 15V | 1W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PMDPB70XP,115 | NXP SEMICONDUCTORS | 2 P-Channel (Dual) | 30V | 2.9A (Ta) | 87 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 7.8nC @ 5V | 680pF @ 15V | 490mW | Surface Mount | 6-UDFN Exposed Pad | |
| SSM3K303T(TE85L,F) | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 2.9A (Ta) | 83 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2316DS-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 2.9A (Ta) | 50 mOhm @ 3.4A, 10V | 800mV @ 250µA | 7nC @ 10V | 215pF @ 15V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2316DS-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 2.9A (Ta) | 50 mOhm @ 3.4A, 10V | 800mV @ 250µA | 7nC @ 10V | 215pF @ 15V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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