2.9A (Ta),Current - Continuous Drain (Id) @ 25°C
TO-236-3, SC-59, SOT-23-3,Package / Case
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AO3435 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 70 mOhm @ 3.5A, 4.5V 1V @ 250µA 11nC @ 4.5V 745pF @ 10V 1W Surface Mount TO-236-3, SC-59, SOT-23-3
ZXMN3B14FTA DIODES INC
MOSFET N-Channel, Metal Oxide 30V 2.9A (Ta) 80 mOhm @ 3.1A, 4.5V 700mV @ 250µA 6.7nC @ 4.5V 568pF @ 15V 1W Surface Mount TO-236-3, SC-59, SOT-23-3
SSM3K303T(TE85L,F) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 2.9A (Ta) 83 mOhm @ 1.5A, 10V 2.6V @ 1mA 3.3nC @ 4V 180pF @ 10V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2316DS-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.9A (Ta) 50 mOhm @ 3.4A, 10V 800mV @ 250µA 7nC @ 10V 215pF @ 15V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2316DS-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.9A (Ta) 50 mOhm @ 3.4A, 10V 800mV @ 250µA 7nC @ 10V 215pF @ 15V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2321DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 57 mOhm @ 3.3A, 4.5V 900mV @ 250µA 13nC @ 4.5V 715pF @ 6V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2321DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 57 mOhm @ 3.3A, 4.5V 900mV @ 250µA 13nC @ 4.5V 715pF @ 6V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3