Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
SI2367DS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 2.8A (Ta), 3.8A (Tc) | 66 mOhm @ 2.5A, 4.5V | 1V @ 250µA | 23nC @ 8V | 561pF @ 10V | 1.7W | Surface Mount | TO-236-3, SC-59, SOT-23-3 |