2.7A (Tc),Current - Continuous Drain (Id) @ 25°C
8nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2303CDS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 2.7A (Tc) 190 mOhm @ 1.9A, 10V 3V @ 250µA 8nC @ 10V 155pF @ 15V 2.3W Surface Mount TO-236-3, SC-59, SOT-23-3
SI2303CDS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 2.7A (Tc) 190 mOhm @ 1.9A, 10V 3V @ 250µA 8nC @ 10V 155pF @ 15V 2.3W Surface Mount TO-236-3, SC-59, SOT-23-3