2.7A (Tc),Current - Continuous Drain (Id) @ 25°C
8.2nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF614SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF614PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 36W Through Hole TO-220-3
IRF614STRRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF614 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 36W Through Hole TO-220-3
IRF614S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF614L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 3.1W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF614STRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF614STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 2.7A (Tc) 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB