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Home Category Discrete Semiconductor Products FETs single, Arrays and Modules
2.7A (Tc),Current - Continuous Drain (Id) @ 25°C
200 mOhm @ 1.6A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFL014PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 2.7A (Tc) 200 mOhm @ 1.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRFL014 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 2.7A (Tc) 200 mOhm @ 1.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRFL014TR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 2.7A (Tc) 200 mOhm @ 1.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRFL014TRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 2.7A (Tc) 200 mOhm @ 1.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2W Surface Mount TO-261-4, TO-261AA


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