| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQD4P40TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 400V | 2.7A (Tc) | 3.1 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FQP3P50 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 85W | Through Hole | TO-220-3 | |
| FQD4P40TF | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 400V | 2.7A (Tc) | 3.1 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FQB3P50TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 3.13W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FQI3P50TU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 3.13W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRFR9214PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 250V | 2.7A (Tc) | 3 Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | 220pF @ 25V | 50W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI1471DH-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 2.7A (Tc) | 100 mOhm @ 2A, 10V | 1.6V @ 250µA | 9.8nC @ 4.5V | 445pF @ 15V | 2.78W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SI1473DH-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 2.7A (Tc) | 100 mOhm @ 2A, 10V | 3V @ 250µA | 6.2nC @ 4.5V | 365pF @ 15V | 2.78W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SI1469DH-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 2.7A (Tc) | 80 mOhm @ 2A, 10V | 1.5V @ 250µA | 8.5nC @ 4.5V | 470pF @ 10V | 2.78W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SI1467DH-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 2.7A (Tc) | 90 mOhm @ 2A, 4.5V | 1V @ 250µA | 13.5nC @ 4.5V | 561pF @ 10V | 2.78W | Surface Mount | 6-TSSOP, SC-88, SOT-363 |
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