| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4102DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 2.7A (Ta), 3.8A (Tc) | 158 mOhm @ 2.7A, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | 4.8W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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