2.7A (Ta),Current - Continuous Drain (Id) @ 25°C
625mW,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTJS3151PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 12V 2.7A (Ta) 60 mOhm @ 3.3A, 4.5V 400mV @ 100µA 8.6nC @ 4.5V 850pF @ 12V 625mW Surface Mount 6-TSSOP, SC-88, SOT-363
NTJS3151PT2G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 12V 2.7A (Ta) 60 mOhm @ 3.3A, 4.5V 400mV @ 100µA 8.6nC @ 4.5V 850pF @ 12V 625mW Surface Mount 6-TSSOP, SC-88, SOT-363
NTJS3151PT2 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 12V 2.7A (Ta) 60 mOhm @ 3.3A, 4.5V 400mV @ 100µA 8.6nC @ 4.5V 850pF @ 12V 625mW Surface Mount 6-TSSOP, SC-88, SOT-363