2.7A (Ta),Current - Continuous Drain (Id) @ 25°C
1W,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI1417EDH-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 2.7A (Ta) 85 mOhm @ 3.3A, 4.5V 450mV @ 250µA 8nC @ 4.5V - 1W Surface Mount 6-TSSOP, SC-88, SOT-363
SI1417EDH-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 2.7A (Ta) 85 mOhm @ 3.3A, 4.5V 450mV @ 250µA 8nC @ 4.5V - 1W Surface Mount 6-TSSOP, SC-88, SOT-363