2.7A (Ta),Current - Continuous Drain (Id) @ 25°C
-,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
EPC8008ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 2.7A (Ta) 325 mOhm @ 500mA, 5V 2.5V @ 250µA - 25pF @ 20V - Surface Mount Die
EPC8008TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 2.7A (Ta) 325 mOhm @ 500mA, 5V 2.5V @ 250µA 0.177nC @ 20V 25pF @ 20V - Surface Mount Die