2.7A (Ta),Current - Continuous Drain (Id) @ 25°C
-,Input Capacitance (Ciss) @ Vds
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI3455ADV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 100 mOhm @ 3.5A, 10V 3V @ 250µA 13nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI5855DC-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.7A (Ta) 110 mOhm @ 2.7A, 4.5V 1V @ 250µA 7.7nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead
SI4848DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 2.7A (Ta) 85 mOhm @ 3.5A, 10V 2V @ 250µA 21nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI1417EDH-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 2.7A (Ta) 85 mOhm @ 3.3A, 4.5V 450mV @ 250µA 8nC @ 4.5V - 1W Surface Mount 6-TSSOP, SC-88, SOT-363
SI1417EDH-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 2.7A (Ta) 85 mOhm @ 3.3A, 4.5V 450mV @ 250µA 8nC @ 4.5V - 1W Surface Mount 6-TSSOP, SC-88, SOT-363
SI4848DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 2.7A (Ta) 85 mOhm @ 3.5A, 10V 2V @ 250µA 21nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI3455ADV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 100 mOhm @ 3.5A, 10V 3V @ 250µA 13nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI5853DC-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.7A (Ta) 110 mOhm @ 2.7A, 4.5V 1V @ 250µA 7.7nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead
SI1402DH-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.7A (Ta) 77 mOhm @ 3A, 4.5V 1.6V @ 250µA 4.5nC @ 4.5V - 950mW Surface Mount 6-TSSOP, SC-88, SOT-363
SI1402DH-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.7A (Ta) 77 mOhm @ 3A, 4.5V 1.6V @ 250µA 4.5nC @ 4.5V - 950mW Surface Mount 6-TSSOP, SC-88, SOT-363