2.7A (Ta),Current - Continuous Drain (Id) @ 25°C
15nC @ 4.5V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NDC632P FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 2.7A (Ta) 140 mOhm @ 2.7A, 4.5V 1V @ 250µA 15nC @ 4.5V 550pF @ 10V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
NTLJS4149PTAG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 62 mOhm @ 2A, 4.5V 1V @ 250µA 15nC @ 4.5V 960pF @ 15V 700mW Surface Mount 6-WDFN Exposed Pad
NTLJS4149PTBG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 62 mOhm @ 4.5A, 4.5V 1V @ 250µA 15nC @ 4.5V 960pF @ 15V 700mW Surface Mount 6-WDFN Exposed Pad