2.7A (Ta),Current - Continuous Drain (Id) @ 25°C
-,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP3160L-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 122 mOhm @ 2.7A, 10V 2.1V @ 250µA - 227pF @ 10V 1.08W Surface Mount TO-236-3, SC-59, SOT-23-3
DMP3100L-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 100 mOhm @ 2.7A, 10V 2.1V @ 250µA - 227pF @ 10V 1.08W Surface Mount TO-236-3, SC-59, SOT-23-3
EPC8008ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 2.7A (Ta) 325 mOhm @ 500mA, 5V 2.5V @ 250µA - 25pF @ 20V - Surface Mount Die
SSM3J14TTE85LF TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 85 mOhm @ 1.35A, 10V - - 413pF @ 15V 1.25W Surface Mount TO-236-3, SC-59, SOT-23-3